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陳景升

陳景升

陳景升

首席研究員

[email protected]

教育背景

1990—1994蘭州大學(xué),,現(xiàn)代物理系,,中國,,學(xué)士
1994—1999蘭州大學(xué),現(xiàn)代物理系,,中國,,博士


工作經(jīng)歷

1999—2001南洋理工大學(xué),,電子電器工程學(xué)院,,新加坡,,博后
2001—2007新加坡科技研究,數(shù)據(jù)存儲研究所,,研究科學(xué)家(2級)
2008—2012新加坡國立大學(xué),,材料科學(xué)與工程系,副教授
2013—至今 新加坡國立大學(xué),,材料科學(xué)與工程系,,教授


研究領(lǐng)域

自旋電子學(xué)磁性材料/異質(zhì)結(jié)構(gòu)和器件
鐵電材料,鐵電隧道結(jié)和鐵電疇壁器件
基于磁非易失性存儲器的神經(jīng)形態(tài)計算,,非揮發(fā)性鐵電記憶體,,電阻存儲器.
強電子相關(guān)的氧化物材料


代表性論文

[1] Liang Liu, Chenghang Zhou, Xinyu Shu, Changjian Li, Tieyang Zhao, Weinan Lin, Jinyu Deng, Qidong Xie, Shaohai Chen, Jing Zhou, Rui Guo, Han Wang, Jihang Yu, Shu Shi, Ping Yang, Stephen Pennycook, Aurelien Manchon, Jingsheng Chen*, “Symmetry-dependent field-free switching of perpendicular magnetization” Nature Nanotechnology, Accepted (2020).

[2] Weinan Lin, Baishun Yang, Andy Paul Chen, Xiaohan Wu, Rui Guo, Shaohai Chen, Liang Liu, Qidong Xie, Xinyu Shu, Yajuan Hui, Gan Moog Chow, Yuanping Feng, Giovanni Carlotti, Silvia Tacchi, Hongxin Yang, Jingsheng Chen*, ”Perpendicular Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction at an Oxide/Ferromagnetic Metal Interface” Physical Review Letters, 124, 217202 (2020).
[3] Rui Guo, Lu You, Weinan Lin, Amr Abdelsamie, Xinyu Shu, Guowei Zhou, Shaohai Chen, Liang Liu, Xiaobing Yan, Junling Wang, Jingsheng Chen*, "Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect” Nature communications, 11, 2571 (2020).
[4] Han Wang, Yingying Dai, Zhongran Liu, Qidong Xie, Chao Liu, Weinan Lin, Liang Liu, Ping Yang, John Wang, Thirumalai Venky Venkatesan, Gan Moog Chow, He Tian, Zhidong Zhang, Jingsheng Chen* “Overcoming the limits of interfacial Dzyaloshinskii-Moriya interaction by antiferromagnetic order in multiferroic heterostructures” Advanced Materials, 32 (14), 1904415 (2020).
[5] Liang Liu, Qing Qin, Weinan Lin, Changjian Li, Qidong Xie, Zhishiuh Lim, Shikun He, Jihang Yu, Mengsha Li, Xinyu Shu, Stephen J. Pennycook, Jingsheng Chen*, “Current-induced magnetization switching in all-oxide SrRuO3/SrIrO3 bilayer” Nature Nanotechnology, 14, 939 (2019).

[6] Yangyang Li, Zhi Gen Yu, Ling Wang, Yakui Weng, Chi Sin Tang, Xinmao Yin, Kun Han, Haijun Wu, Xiaojiang Yu, Lai Mun Wong, Dongyang Wan, Xiao Renshaw Wang, Jianwei Chai, Yong-Wei Zhang, Shijie Wang, John Wang, Andrew T.S. Wee, Mark B.H. Breese, Stephen J. Pennycook, Thirumalai Venkatesan, Shuai Dong, Jun Min Xue, Jingsheng Chen* “Electronic-reconstruction-enhanced hydrogen evolution catalysis in oxide polymorphs” Nature Communication, 10, 3149 (2019).
[7] Jing Zhou, Xiao Wang, Yaohua Liu, Jihang Yu, Huixia Fu, Liang Liu, Shaohai Chen, Jinyu Deng, Weinan Lin, Xinyu Shu, Herng Yau Yoong, Tao Hong, Masaaki Matsuda, Ping Yang, Stefan Adams, Binghai Yan, Xiufeng Han, Jingsheng Chen*, “Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn” Science Advance, 5 (5), eaau6696 (2019).
[8] Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark B. H. Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen*, “Giant enhancements of perpendicular magnetic anisotropy and spin-orbit torque by MoS2 layer” Advanced Materials, 31 (21), 1900776 (2019).
[9] Qing Qin, Liang Liu, Weinan Lin, Xinyu Shu, Qidong Xie, Zhishiuh Lim, Changjian Li, Shikun He, Gan Moog Chow, Jingsheng Chen*, “Emergence of Topological Hall Effect in a SrRuO3 Single Layer” Advanced Materials, 1807008 (2019), 
[10] H. Wang, Z.R. Liu, H.Y. Yoong, T. R. Paudel, J.X. Xiao, R. Guo, W.N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian and J.S. Chen*, “Direct observation of room-temperature out-of-plane ferroelectricity and tunnelling electroresistance at the two-dimensional limit” Nature Communication, 9 (1), 3319 (2018).


NUS網(wǎng)站
https://cde.nus.edu.sg/mse/staff/chen-jingsheng/



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